The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Dec. 03, 2012
Lg Innotek Co., Ltd., Seoul, KR;
Kyung Jun Kim, Seoul, KR;
LG Innotek Co., Ltd., Seoul, KR;
Abstract
A semiconductor light emitting device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active layer on the second semiconductor layer; a third semiconductor layer on the active layer; and a fourth semiconductor layer on the third semiconductor layer, wherein the first semiconductor layer has a composition equation of Al(GaIn)N(0≦X,Y≦1), wherein the third semiconductor layer has a composition equation of Al(GaIn)N(0≦X,Y≦1), wherein the active layer includes a plurality of quantum barrier layers and a plurality of quantum well layers having a material different from the quantum barrier layers, wherein the plurality of quantum well layers include an AlGaN based semiconductor layer, wherein the plurality of quantum barrier layers has a larger band gap energy than that of the quantum well layers.