The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Oct. 30, 2009
Vasil Vorsa, Coopersburg, PA (US);
Andrew David Johnson, Doylestown, PA (US);
Manchao Xiao, San Diego, CA (US);
Vasil Vorsa, Coopersburg, PA (US);
Andrew David Johnson, Doylestown, PA (US);
Manchao Xiao, San Diego, CA (US);
Air Products and Chemicals, Inc., Allentown, PA (US);
Abstract
The present invention is a method to increase the intrinsic compressive stress in plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) and silicon carbonitride (SiCN) thin films, comprising depositing the film from an amino vinylsilane-based precursor. More specifically the present invention uses the amino vinylsilane-based precursor selected from the formula: [RRN]SiR(R), where x+y+z=4, x=1-3, y=0-2, and z=1-3; R, Rand Rcan be hydrogen, Cto Calkane, alkene, or Cto Caromatic; each Ris a vinyl, allyl or vinyl-containing functional group.