The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Dec. 09, 2008
Michelle Yvonne Simmons, Maroubra, AU;
Andreas Fuhrer, Zurich, CH;
Martin Fuechsle, Deuerling, DE;
Bent Weber, Mosman, AU;
Thilo Curd Gerhard Reusch, Regensburg, DE;
Wilson Pok, Lakemba, AU;
Frank Ruess, Herrenberg, DE;
Michelle Yvonne Simmons, Maroubra, AU;
Andreas Fuhrer, Zurich, CH;
Martin Fuechsle, Deuerling, DE;
Bent Weber, Mosman, AU;
Thilo Curd Gerhard Reusch, Regensburg, DE;
Wilson Pok, Lakemba, AU;
Frank Ruess, Herrenberg, DE;
Qucor Pty Ltd, Sydney, New South Wales, AU;
Abstract
This invention concerns the fabrication of nano to atomic scale devices, that is electronic devices fabricated down to atomic accuracy. The fabrication process uses either an SEM or a STM tip to pattern regions on a semiconductor substrate. Then, forming electrically active parts of the device at those regions. Encapsulating the formed device. Using a SEM or optical microscope to align locations for electrically conducting elements on the surface of the encapsulating semiconductor with respective active parts of the device encapsulated below the surface. Forming electrically conducting elements on the surface at the aligned locations. And, electrically connecting electrically conducting elements on the surface with aligned parts of the device encapsulated below the surface to allow electrical connectivity and tunability of the device. In further aspects the invention concerns the devices themselves.