The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
May. 18, 2006
Jae-hee Cho, Yongin-si, KR;
Dong-seok Leem, Gwangju-si, KR;
Tae-yeon Seong, Seoul-si, KR;
Cheol-soo Sone, Anyang-si, KR;
Jae-hee Cho, Yongin-si, KR;
Dong-seok Leem, Gwangju-si, KR;
Tae-yeon Seong, Seoul-si, KR;
Cheol-soo Sone, Anyang-si, KR;
Samsung Electronics Co., Ltd., Seoul, KR;
Abstract
A method of manufacturing an ohmic contact layer and a method of manufacturing a top emission type nitride-based light emitting device having the ohmic contact layer are provided. The method of manufacturing an ohmic contact layer includes: forming a first conductive material layer on a semiconductor layer; forming a mask layer having a plurality of nano-sized islands on the first conductive material layer; forming a second conductive material layer on the first conductive material layer and the mask layer; and removing the portion of the second conductive material on the islands and the islands through a lift-off process using a solvent. The method ensures the maintenance of good electrical characteristics and an increase of the light extraction efficiency.