The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Aug. 25, 2011
Amitabh Jain, Allen, TX (US);
Amitabh Jain, Allen, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A process for forming diffused region less than 20 nanometers deep with an average doping dose above 10cmin an IC substrate, particularly LDD region in an MOS transistor, is disclosed. Dopants are implanted into a source dielectric layer using gas cluster ion beam (GCIB) implantation, molecular ion implantation or atomic ion implantation resulting in negligible damage in the IC substrate. A spike anneal or a laser anneal diffuses the implanted dopants into the IC substrate. The inventive process may also be applied to forming source and drain (S/D) regions. One source dielectric layer may be used for forming both NLDD and PLDD regions.