The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Dec. 14, 2010
Applicants:
Kuo-jui Peng, Taipei, TW;
Chuan-jane Chao, Hsinchu, TW;
Tsyr-shyang Liou, Taipei, TW;
Inventors:
Assignee:
RichWave Technology Corp., NeiHu District, Taipei, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01); H01L 21/28 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract
A compound semiconductor device is provided, including a gallium arsenide (GaAs) substrate having a first protrusion portion and a second protrusion portion, wherein the first protrusion portion is formed over a first portion of the GaAs substrate and the second protrusion is formed over a second portion of the GaAs substrate. A first element is disposed over the first protrusion portion, and a second element is disposed over the second protrusion portion.