The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Nov. 10, 2011
Kazuhide Tomiyasu, Osaka, JP;
Tomohiro Kimura, Osaka, JP;
Kazuhide Tomiyasu, Osaka, JP;
Tomohiro Kimura, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A TFT () includes a semiconductor layer () of an oxide semiconductor, a source electrode () and a drain electrode () provided on the semiconductor layer () and separated from each other, a gate insulating film () covering a portion of the semiconductor layer between the source electrode () and the drain electrode (), a gate electrode () provided over the semiconductor layer () with the gate insulating film () being interposed between the gate electrode () and the semiconductor layer (). The source electrode () is integrally formed with the source line (). The gate electrode () is integrally formed with the gate line (). The semiconductor layer () extends below the source line (). The entireties of the source line (), the source electrode (), and the drain electrode () are provided on the semiconductor layer ().