The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Dec. 17, 2009
Tetsuo Sakurai, Ichihara, JP;
Tetsuo Sakurai, Ichihara, JP;
Toyoda Gosei Co., Ltd., Aichi, JP;
Abstract
Provided is a method for manufacturing a semiconductor light emitting element, which has a step wherein a substrate composed of a material different from that of a semiconductor layer is used and a III compound semiconductor layer is formed on the substrate, and can reduce the emission wavelength distribution (δ) of the obtained semiconductor light emitting layer. The method for manufacturing the semiconductor light emitting element having the III compound semiconductor layer is characterized in having: a compound semiconductor substrate forming step wherein at least one compound semiconductor layer is formed on the substrate and a compound semiconductor substrate having an amount of warpage (H) within the range of 50 μm≦H≦250 μm is formed; and a light emitting layer forming step wherein the light emitting layer composed of a plurality of III compound semiconductor layers is formed on the compound semiconductor substrate which has been formed.