The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Mar. 30, 2012
Shih-cheng Huang, Hsinchu, TW;
Po-min Tu, Hsinchu, TW;
Ying-chao Yeh, Hsinchu, TW;
Wen-yu Lin, Hsinchu, TW;
Peng-yi Wu, Hsinchu, TW;
Shih-hsiung Chan, Hsinchu, TW;
Shih-Cheng Huang, Hsinchu, TW;
Po-Min Tu, Hsinchu, TW;
Ying-Chao Yeh, Hsinchu, TW;
Wen-Yu Lin, Hsinchu, TW;
Peng-Yi Wu, Hsinchu, TW;
Shih-Hsiung Chan, Hsinchu, TW;
Advanced Optoelectronic Technology, Inc., Hsinchu Hsien, TW;
Abstract
A method for manufacturing a polychromatic light emitting diode device, comprising steps of providing an epitaxial substrate and forming a multiple semiconductor layer on the epitaxial substrate, wherein the multiple semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer and an active layer. The active layer emits light of a first wavelength. Thereafter a first wavelength conversion layer is formed on the multiple semiconductor layer. The first wavelength conversion layer is made of semiconductor and absorbs a portion of the light of a first wavelength and emits light of a second wavelength, wherein the second wavelength is longer than the first wavelength.