The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2013

Filed:

Oct. 25, 2011
Applicants:

Motoki Haishi, Ibaraki, JP;

Tomotake Nashiki, Ibaraki, JP;

Tomonori Noguchi, Ibaraki, JP;

Yoshifumi Asahara, Ibaraki, JP;

Inventors:

Motoki Haishi, Ibaraki, JP;

Tomotake Nashiki, Ibaraki, JP;

Tomonori Noguchi, Ibaraki, JP;

Yoshifumi Asahara, Ibaraki, JP;

Assignee:

Nitto Denko Corporation, Ibaraki-shi, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for producing a transparent conductive film including a transparent film substrate and a crystalline transparent conductive layer, including: a first depositing a first indium-based complex oxide having a first tetravalent metal element oxide on the transparent film substrate; and a second depositing indium oxide or a second indium-based complex oxide and lower than the tetravalent metal element oxide content of the indium-based complex oxide used in the first depositing by sputtering to form an amorphous transparent conductive layer, and crystallizing the amorphous transparent conductive layer. The method allows a reduction in crystallization time.


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