The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Apr. 20, 2010
Fumitoshi Ito, Hamura, JP;
Yoshiyuki Kawashima, Hitachinaka, JP;
Takeshi Sakai, Hitachinaka, JP;
Yasushi Ishii, Mito, JP;
Yasuhiro Kanamaru, Hitachinaka, JP;
Takashi Hashimoto, Iruma, JP;
Makoto Mizuno, Tokyo, JP;
Kousuke Okuyama, Kawagoe, JP;
Yukiko Manabe, Yokohama, JP;
Fumitoshi Ito, Hamura, JP;
Yoshiyuki Kawashima, Hitachinaka, JP;
Takeshi Sakai, Hitachinaka, JP;
Yasushi Ishii, Mito, JP;
Yasuhiro Kanamaru, Hitachinaka, JP;
Takashi Hashimoto, Iruma, JP;
Makoto Mizuno, Tokyo, JP;
Kousuke Okuyama, Kawagoe, JP;
Yukiko Manabe, Yokohama, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.