The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Jun. 10, 2011
Mourad El Baraji, Sunnyvale, CA (US);
Neal Berger, Cupertino, CA (US);
Lucien Lombard, Grenoble, FR;
Lucian Prejbeanu, Seyssinet Pariset, FR;
Ricardo Alves Ferreira Costa E Sousa, Grenoble, FR;
Guillaume Prenat, Grenoble, FR;
Mourad El Baraji, Sunnyvale, CA (US);
Neal Berger, Cupertino, CA (US);
Lucien Lombard, Grenoble, FR;
Lucian Prejbeanu, Seyssinet Pariset, FR;
Ricardo Alves Ferreira Costa E Sousa, Grenoble, FR;
Guillaume Prenat, Grenoble, FR;
Crocus Technology Inc., Sunnyvale, CA (US);
Abstract
A magnetic random access memory ('MRAM') cell includes: (1) a first magnetic layer having a first magnetization direction and a magnetic anisotropy axis; (2) a second magnetic layer having a second magnetization direction; and (3) a spacer layer disposed between the first magnetic layer and the second magnetic layer. The MRAM cell also includes a field line magnetically coupled to the MRAM cell and configured to induce a write magnetic field along a magnetic field axis, and the magnetic anisotropy axis is tilted relative to the magnetic field axis. During a write operation, the first magnetization direction is switchable between m directions to store data corresponding to one of m logic states, with m>2, at least one of the m directions is aligned relative to the magnetic anisotropy axis, and at least another one of the m directions is aligned relative to the magnetic field axis.