The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
May. 25, 2010
Suk-hun Choi, Suwon-si, KR;
Ki-ho Bae, Seoul, KR;
Yi-koan Hong, Suwon-si, KR;
Kyung-hyun Kim, Seoul, KR;
Tae-hyun Kim, Suwon-si, KR;
Kyung-tae Nam, Suwon-si, KR;
Jun-ho Jeong, Suwon-si, KR;
Suk-hun Choi, Suwon-si, KR;
Ki-ho Bae, Seoul, KR;
Yi-koan Hong, Suwon-si, KR;
Kyung-hyun Kim, Seoul, KR;
Tae-hyun Kim, Suwon-si, KR;
Kyung-tae Nam, Suwon-si, KR;
Jun-ho Jeong, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A semiconductor device includes an interlayer insulating layer disposed on a substrate, the interlayer insulating layer comprising an opening exposing the substrate, a barrier layer pattern disposed within the opening, and a conductive pattern disposed on the barrier layer pattern, the conductive pattern having an oxidized portion extending out of the opening and a non-oxidized portion within the opening, wherein a width of the conductive pattern is determined by a thickness of the barrier layer pattern.