The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2013

Filed:

Oct. 18, 2010
Applicants:

Shrikar Bhagath, San Jose, CA (US);

Hem Takiar, Fremont, CA (US);

Inventors:

Shrikar Bhagath, San Jose, CA (US);

Hem Takiar, Fremont, CA (US);

Assignee:

SanDisk Technologies Inc., Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/492 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device including a semiconductor die in a die stack under-filled with a film. Once the semiconductor die are formed, they may be stacked and interconnected. The interconnection may leave a small space between semiconductor die in the die stack. This space is advantageously completely filled using a vapor deposition process where a coating is deposited as a vapor which flows over all surfaces of the die stack, including into the spaces between the die in the stack. The vapor then deposits on the surfaces between and around the die and forms a film which completely fills the spaces between the die in the die stack. The material used in the vapor deposition under-fill process may for example be a member of the parylene family of polymers, and in embodiments, may be parylene-N.


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