The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2013

Filed:

Apr. 13, 2012
Applicants:

Flavio Francesco Villa, Milan, IT;

Gabriele Barlocchi, Cornaredo, IT;

Pietro Corona, Milan, IT;

Benedetto Vigna, Pietrapertosa, IT;

Lorenzo Baldo, Bareggio, IT;

Inventors:

Flavio Francesco Villa, Milan, IT;

Gabriele Barlocchi, Cornaredo, IT;

Pietro Corona, Milan, IT;

Benedetto Vigna, Pietrapertosa, IT;

Lorenzo Baldo, Bareggio, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01);
U.S. Cl.
CPC ...
Abstract

A capacitive semiconductor pressure sensor, comprising: a bulk region of semiconductor material; a buried cavity overlying a first part of the bulk region; and a membrane suspended above said buried cavity, wherein, said bulk region and said membrane are formed in a monolithic substrate, and in that said monolithic substrate carries structures for transducing the deflection of said membrane into electrical signals, wherein said bulk region and said membrane form electrodes of a capacitive sensing element, and said transducer structures comprise contact structures in electrical contact with said membrane and with said bulk region.


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