The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2013

Filed:

Dec. 12, 2011
Applicants:

Bio Kim, Seoul, KR;

Kihyun Hwang, Seongnam-si, KR;

Jaeyoung Ahn, Seongnam-si, KR;

Seunghyun Lim, Yongin-si, KR;

Dongwoo Kim, Incheon, KR;

Inventors:

Bio Kim, Seoul, KR;

Kihyun Hwang, Seongnam-si, KR;

Jaeyoung Ahn, Seongnam-si, KR;

SeungHyun Lim, Yongin-si, KR;

Dongwoo Kim, Incheon, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are three-dimensional semiconductor memory devices and methods of forming the same. The device includes a substrate, conductive patterns stacked on the substrate, and an active pattern penetrating the conductive patterns to be connected to the substrate. The active pattern may include a first doped region provided in an upper portion of the active pattern, and a diffusion-resistant doped region overlapped with at least a portion of the first doped region. The diffusion-resistant doped region may be a region doped with carbon.


Find Patent Forward Citations

Loading…