The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Aug. 13, 2011
Steven S. Bui, Simi Valley, CA (US);
Tahir Hussain, Malibu, CA (US);
James Chingwei LI, Simi Valley, CA (US);
Steven S. Bui, Simi Valley, CA (US);
Tahir Hussain, Malibu, CA (US);
James Chingwei Li, Simi Valley, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A combinationally doped semiconductor layer, a double heterojunction bipolar transistor (DHBT) including a combinationally doped semiconductor layer, and a method of making a combinationally doped semiconductor layer employ a combination of carbon and beryllium doping. The combinationally doped semiconductor layer includes a first sublayer of a semiconductor material doped substantially with beryllium and a second sublayer of the semiconductor material doped substantially with carbon. The DHBT includes a carbon-beryllium combinationally doped semiconductor layer as a base layer. The method of making a combinationally doped semiconductor layer includes growing a first sublayer of the semiconductor layer, the first sublayer being doped substantially with beryllium and growing a second sublayer of the semiconductor layer, the second sublayer being doped substantially with carbon.