The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Mar. 20, 2012
Vincent Gambin, Gardena, CA (US);
Rajinder Sandhu, Castaic, CA (US);
Benjamin Poust, Hawthorne, CA (US);
Michael Wojtowicz, Long Beach, CA (US);
Vincent Gambin, Gardena, CA (US);
Rajinder Sandhu, Castaic, CA (US);
Benjamin Poust, Hawthorne, CA (US);
Michael Wojtowicz, Long Beach, CA (US);
Northrop Grumman Systems Corporation, Falls Church, VA (US);
Abstract
A GaN high electron mobility transistor (HEMT) device having a silicon carbide substrate including a top surface and a bottom surface, where the substrate further includes a via formed through the bottom surface and into the substrate. The device includes a plurality of epitaxial layers provided on the top surface of the substrate, a plurality of device layers provided on the epitaxial layers, and a diamond layer provided within the via.