The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Sep. 01, 2009
Yuichi Saito, Osaka, JP;
Masao Moriguchi, Osaka, JP;
Tokuo Yoshida, Osaka, JP;
Yasuaki Iwase, Osaka, JP;
Yohsuke Kanzaki, Osaka, JP;
Mayuko Sakamoto, Osaka, JP;
Yuichi Saito, Osaka, JP;
Masao Moriguchi, Osaka, JP;
Tokuo Yoshida, Osaka, JP;
Yasuaki Iwase, Osaka, JP;
Yohsuke Kanzaki, Osaka, JP;
Mayuko Sakamoto, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A diodeincludes a gate electrode, a gate insulating layerprovided on the gate electrode, at least one semiconductor layerprovided on the gate insulating layerand which includes a first regionand a second region, a first electrodewhich is provided on the first regionand which is electrically coupled to the first regionand the gate electrode, and a second electrodewhich is provided on the second regionand which is electrically coupled to the second region. The at least one semiconductor layerincludes a channel regionwhich extends above the gate electrodewith the intervention of the gate insulating layertherebetween, and a resistor regionwhich does not extend above the gate electrode. When the diodeis in an ON state, an electric current path is formed between the first electrodeand the second electrode, the electric current path including the channel regionand the resistor region