The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Feb. 18, 2008
Naoki Makita, Osaka, JP;
Naoki Makita, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka-Shi, JP;
Abstract
A semiconductor deviceincludes a thin-film transistorand a thin-film diode. The thin-film transistorincludes a semiconductor layer Swith a channel region, a source region and a drain region, a gate electrodethat controls the conductivity of the channel region, and a gate insulating filmarranged between the semiconductor layer and the gate electrode. The thin-film diodeincludes a semiconductor layer Swith at least an n-type regionand a p-type region. The respective semiconductor layers Sand Sof the thin-film transistorand the thin-film diodeare portions of a single crystalline semiconductor layer, obtained by crystallizing the same crystalline semiconductor film, but have been crystallized to mutually different degrees.