The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Jul. 25, 2012
Sang Heon Han, Gyeonggi-do, KR;
Jong Hyun Lee, Seoul, KR;
Jin Young Lim, Gyeonggi-do, KR;
Dong Ju Lee, Gyeonggi-do, KR;
Heon Ho Lee, Gyeonggi-do, KR;
Young Sun Kim, Gyeonggi-do, KR;
Sung Tae Kim, Seoul, KR;
Sang Heon Han, Gyeonggi-do, KR;
Jong Hyun Lee, Seoul, KR;
Jin Young Lim, Gyeonggi-do, KR;
Dong Ju Lee, Gyeonggi-do, KR;
Heon Ho Lee, Gyeonggi-do, KR;
Young Sun Kim, Gyeonggi-do, KR;
Sung Tae Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.