The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Jul. 13, 2009
Applicants:
Jianhua Yang, Palo Alto, CA (US);
Qiangfei Xia, Palo Alto, CA (US);
Alexandre M. Bratkovski, Mountain View, CA (US);
Inventors:
Jianhua Yang, Palo Alto, CA (US);
Qiangfei Xia, Palo Alto, CA (US);
Alexandre M. Bratkovski, Mountain View, CA (US);
Assignee:
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 47/00 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A memristive device includes a first electrode, a second electrode crossing the first electrode at a non-zero angle, and an active region disposed between the first and second electrodes. The active region has a controlled defect profile throughout its thickness.