The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2013

Filed:

Dec. 08, 2010
Applicants:

Jin-hee Kang, Yongin, KR;

Chun-gi You, Yongin, KR;

Sun Park, Yongin, KR;

Jong-hyun Park, Yongin, KR;

Yul-kyu Lee, Yongin, KR;

Inventors:

Jin-Hee Kang, Yongin, KR;

Chun-Gi You, Yongin, KR;

Sun Park, Yongin, KR;

Jong-Hyun Park, Yongin, KR;

Yul-Kyu Lee, Yongin, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G21G 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An ion implanting system includes an ion generating system that generates ion beams and an ion implanting chamber in which a work-piece that is irradiated with the ion beams generated from the ion generating system is provided and into which the ion beams generated from the ion generating unit are directed. The ion generating system includes a first ion generating unit that irradiates ions to an upper portion of the work-piece and a second ion generating unit irradiating ions to a lower portion of the work-piece. The ion implanting system a can implant ions into a large work-piece through one ion implantation process with ion generating units arranged alternately with respect to each other in the transfer direction of the work-piece.


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