The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2013

Filed:

Mar. 07, 2008
Applicants:

Hideki Hakuma, Tokyo, JP;

Yoshiaki Tanaka, Tokyo, JP;

Tetsuya Aramoto, Tokyo, JP;

Katsumi Kushiya, Tokyo, JP;

Inventors:

Hideki Hakuma, Tokyo, JP;

Yoshiaki Tanaka, Tokyo, JP;

Tetsuya Aramoto, Tokyo, JP;

Katsumi Kushiya, Tokyo, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In an integrated structure of a CIS based thin film solar cell obtained by stacking an light absorbing layer, a high-resistance buffer layer, and a window layer in that order, a first buffer layer adjoining the light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), a second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, a third buffer layer is formed to cover the end face exposed by forming an interconnect pattern in the light absorbing layer, the first buffer layer, and the second buffer layer and the top end surface of the second buffer layer, and the third buffer layer is made of a zinc oxide-based thin film.


Find Patent Forward Citations

Loading…