The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Jun. 29, 2012
Toru Anezaki, Yokohama, JP;
Toru Anezaki, Yokohama, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A method of manufacturing a semiconductor integrated circuit device includes defining a first area by forming a separating area on a substrate, and forming a tunnel film in the first area, a floating gate on the tunnel film, a first electrode in the separating area, a first film on the floating gate, a second film on the first electrode, a control gate on the first film, a second electrode on the second film, and source and drain areas in the first area. The method includes forming a first interlayer film to cover the control gate and the second electrode, forming, in the first interlayer film, a conductive via plug reaching the second electrode, and forming, on the first interlayer film, a second wiring electrically coupled to the second electrode via the conductive via plug, and a first wiring that is capacitively-coupled to the second wiring and to the second electrode.