The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8574685 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 05, 2013

Filed:

Aug. 24, 2010
Applicants:

Jason Lewis, Lutz, FL (US);

Xiaomei Jiang, Tampa, FL (US);

Inventors:

Jason Lewis, Lutz, FL (US);

Xiaomei Jiang, Tampa, FL (US);

Assignee:

University of South Florida, Tampa, FL (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B05D 5/12 (2006.01); B05D 3/00 (2006.01); H05C 1/00 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film and a method of making a thin film. The thin film comprises a patterned substrate, a smooth film of electric field tuned quantum dots solution positioned on the patterned substrate, and a thin layer of metal positioned on the thin film. The method begins by drop-casting a quantum dots solution onto a patterned substrate to create a thin film. While the quantum dots solution is drying, a linearly increasing electric filed is applied. The thin film is then placed in a deposition chamber and a thin layer of metal is deposited onto the thin film. Also included are a method of measuring the photoinduced charge transfer (PCT) rate in a quantum dot nanocomposite film and methods of forming a Shottky barrier on a transparent ITO electrode of a quantum dot film.


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