The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Nov. 01, 2010
Yoshiyuki Abe, Tokyo, JP;
Riichiro Wake, Tokyo, JP;
Masakazu Kuwahara, Tokyo, JP;
Kentaro Sogabe, Tokyo, JP;
Azusa Oshiro, Tokyo, JP;
Hisaki Yada, Tokyo, JP;
Yoshiyuki Abe, Tokyo, JP;
Riichiro Wake, Tokyo, JP;
Masakazu Kuwahara, Tokyo, JP;
Kentaro Sogabe, Tokyo, JP;
Azusa Oshiro, Tokyo, JP;
Hisaki Yada, Tokyo, JP;
Sumitomo Metal Mining Co., Ltd., Tokyo, JP;
Abstract
An oxide evaporation material according to the present invention includes a sintered body containing indium oxide as a main component thereof and cerium with a Ce/In atomic ratio of 0.001 to 0.110. The L* value in the CIE 1976 color space is 62 to 95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of an oxygen gas is introduced into a film-formation vacuum chamber, a transparent conducting film having a low resistance and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the amount of the oxygen gas introduced is small, the difference in composition between the film and the evaporation material is made small. This reduces the variations in composition and characteristics among films formed in large quantities.