The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Oct. 02, 2008
Young-ho Hong, Seoul, KR;
Hyon-jong Cho, Gumi-si, KR;
Sung-young Lee, Gumi-si, KR;
Seung-ho Shin, Seoul, KR;
Hong-woo Lee, Gumi-si, KR;
Young-Ho Hong, Seoul, KR;
Hyon-Jong Cho, Gumi-si, KR;
Sung-Young Lee, Gumi-si, KR;
Seung-Ho Shin, Seoul, KR;
Hong-Woo Lee, Gumi-si, KR;
Siltron, Inc., Gumi, KR;
Abstract
The present invention relates to a method for manufacturing an ultra low defect semiconductor single crystalline ingot, which uses a Czochralski process for growing a semiconductor single crystalline ingot through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and slowly pulling up the seed while rotating the seed, wherein a defect-free margin is controlled by increasing or decreasing a heat space on a surface of the semiconductor melt according to change in length of the single crystalline ingot as progress of the single crystalline ingot growth process.