The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2013

Filed:

Aug. 30, 2011
Applicants:

Jordi Veirman, Annecy le Vieux, FR;

Sebastien Dubois, Scionzier, FR;

Nicolas Enjalbert, Burlats, FR;

Inventors:

Jordi Veirman, Annecy le Vieux, FR;

Sebastien Dubois, Scionzier, FR;

Nicolas Enjalbert, Burlats, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 25/00 (2006.01); G06F 19/00 (2011.01); G06F 17/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for determining the oxygen concentration of a sample made of a semiconductor material includes a heat treatment step of the sample to form thermal donors, the measurement of the resistivity in an area of the sample, the determination of the thermal donor concentration from a relation expressing the charge carrier mobility according to an ionized dopant impurity concentration, by adding to the dopant impurity concentration four times the thermal donor concentration, and from the measured resistivity value. The method finally includes determining the oxygen concentration from the thermal donor concentration.


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