The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Aug. 23, 2011
Applicant:
Sudhir K. Madan, Richardson, TX (US);
Inventor:
Sudhir K. Madan, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of reading a memory cell. The method includes the step of connecting () a reference voltage generator () to a first bitline (/BL). The first bitline is charged to a reference voltage (VREF) from the reference voltage generator. The reference voltage generator is disconnected (RFWL_A/B low at t, FIG.B) from the first bitline. A signal voltage (PL high at t, FIG.B) from the memory cell is applied to a second bitline (BL) after the step of disconnecting. A difference voltage between the first and second bitlines is amplified (SAEN high at t, FIGS.A andB).