The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Apr. 09, 2012
Wanli Yang, El Cerrito, CA (US);
Jason D. Fabbri, San Francisco, CA (US);
Nicholas A. Melosh, Menlo Park, CA (US);
Zahid Hussain, Orinda, CA (US);
Zhi-xun Shen, Stanford, CA (US);
Wanli Yang, El Cerrito, CA (US);
Jason D. Fabbri, San Francisco, CA (US);
Nicholas A. Melosh, Menlo Park, CA (US);
Zahid Hussain, Orinda, CA (US);
Zhi-Xun Shen, Stanford, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.