The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Sep. 23, 2011
Applicants:
Sangjin Hyun, Gyeonggi-do, KR;
Yugyun Shin, Seoul, KR;
Hagju Cho, Seoul, KR;
Hyung-seok Hong, Seoul, KR;
Inventors:
Sangjin Hyun, Gyeonggi-do, KR;
Yugyun Shin, Seoul, KR;
Hagju Cho, Seoul, KR;
Hyung-seok Hong, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided are a semiconductor device and a method of forming the same. The method may include forming a gate dielectric layer including a plurality of elements on a substrate; supplying a specific element to the gate dielectric layer; forming a product though reacting the specific element with at least one of the plurality of elements; and removing the product.