The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Mar. 30, 2012
Tomoyuki Kamiyama, Wako, JP;
Tomoyuki Kamiyama, Wako, JP;
Honda Motor Co., Ltd., Tokyo, JP;
Abstract
A light receiving device comprises a photoelectric conversion element formed on a first-conductivity-type semiconductor substrate, and further comprises a plurality of photoelectron distributors formed on the first-conductivity-type semiconductor substrate. The photoelectron distributor has a first transfer unit for transferring photoelectrons generated in the photoelectric conversion element, a photoelectron hold unit for temporarily holding the photoelectrons generated in the photoelectric conversion element, a second transfer unit for transferring the photoelectrons held in the photoelectron hold unit, and a floating diffusion layer for storing the transferred photoelectrons and converting the photoelectrons to a voltage. A first-conductivity-type impurity region, which has a first-level, first-conductivity-type impurity concentration higher than the first-conductivity-type impurity concentration of the first-conductivity-type semiconductor substrate, is formed in the vicinity of a surface of the first-conductivity-type semiconductor substrate in the photoelectron hold unit.