The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Sep. 13, 2012
Yan Zun LI, Lagrangeville, NY (US);
Chandrasekharan Kothandaraman, Hopewell Junction, NY (US);
Dan Moy, Bethel, CT (US);
Norman W. Robson, Hopewell Junction, NY (US);
John M. Safran, Wappingers Falls, NY (US);
Yan Zun Li, Lagrangeville, NY (US);
Chandrasekharan Kothandaraman, Hopewell Junction, NY (US);
Dan Moy, Bethel, CT (US);
Norman W. Robson, Hopewell Junction, NY (US);
John M. Safran, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An antifuse has first and second semiconductor regions having one conductivity type and a third semiconductor region therebetween having an opposite conductivity type. A conductive region contacting the first region has a long dimension in a second direction transverse to the direction of a long dimension of a gate. An antifuse anode is spaced apart from the first region in the second direction and a contact is connected with the second region. Applying a programming voltage between the anode and the contact with gate bias sufficient to fully turn on field effect transistor operation of the antifuse heats the first region to drive a dopant outwardly, causing an edge of the first region to move closer to an edge of the second region and reduce electrical resistance between the first and second regions by an one or more orders of magnitude.