The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Oct. 31, 2011
Shunpei Yamazaki, Tokyo, JP;
Yusuke Nonaka, Kanagawa, JP;
Takatsugu Omata, Kanagawa, JP;
Tatsuya Honda, Kanagawa, JP;
Akiharu Miyanaga, Tochigi, JP;
Hiroki Ohara, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Yusuke Nonaka, Kanagawa, JP;
Takatsugu Omata, Kanagawa, JP;
Tatsuya Honda, Kanagawa, JP;
Akiharu Miyanaga, Tochigi, JP;
Hiroki Ohara, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved. For improvement of the reliability of the transistor, a buffer layer is provided between a drain electrode layer (or a source electrode layer) and an oxide semiconductor layer such that the end portion of the buffer layer is beyond the side surface of the drain electrode layer (or the source electrode layer) when seen in a cross section, whereby the buffer layer can relieve the concentration of electric field. The buffer layer is a single layer or a stacked layer including a plurality of layers, and includes, for example, an In—Ga—Zn—O film containing nitrogen, an In—Sn—O film containing nitrogen, an In—Sn—O film containing SiOx, or the like.