The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Dec. 08, 2011
Seheon Kim, Pasadena, CA (US);
Axel Scherer, Woodstock, VT (US);
Jingqing Huang, Pasadena, CA (US);
Dong Yoon OH, Pasadena, CA (US);
Seheon Kim, Pasadena, CA (US);
Axel Scherer, Woodstock, VT (US);
Jingqing Huang, Pasadena, CA (US);
Dong Yoon Oh, Pasadena, CA (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
A method of etching active quantum nanostructures provides the step of laterally etching of an intermediate active quantum nanostructure layer interposed between cladding layers. The lateral etching can be carried out on at least one side of the intermediate active quantum nanostructure layer selectively, with respect to the cladding layers to define at least one lateral recess or spacing in the intermediate active quantum nanostructure layer and respective lateral protrusions of cladding layers protruding with respect to the intermediate active quantum nanostructure layer. This method can be applied to create devices including active quantum nanostructures such as, for example, three-dimensional photonic crystals, a photonic crystal double-slab and a photonic crystal laser.