The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2013

Filed:

May. 29, 2009
Applicants:

Antonio Facchetti, Chicago, IL (US);

Zhihua Chen, Skokie, IL (US);

Florian Doetz, Singapore, SG;

Marcel Kastler, Basel, CH;

Tobin J. Marks, Evanston, IL (US);

He Yan, Skokie, IL (US);

Yan Zheng, Skokie, IL (US);

Inventors:

Antonio Facchetti, Chicago, IL (US);

Zhihua Chen, Skokie, IL (US);

Florian Doetz, Singapore, SG;

Marcel Kastler, Basel, CH;

Tobin J. Marks, Evanston, IL (US);

He Yan, Skokie, IL (US);

Yan Zheng, Skokie, IL (US);

Assignees:

BASF SE, Ludwigshafen, DE;

Polyera Corporation, Skokie, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C07D 471/08 (2006.01); H01L 51/50 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed are new semiconductor materials prepared from dimeric perylene compounds. Such compounds can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.


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