The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Nov. 12, 2009
Erika Takahashi, Kanagawa, JP;
Takayuki Kato, Kanagawa, JP;
Hidekazu Miyairi, Kanagawa, JP;
Yasuhiro Jinbo, Kanagawa, JP;
Mitsuhiro Ichijo, Kanagawa, JP;
Tomokazu Yokoi, Kanagawa, JP;
Erika Takahashi, Kanagawa, JP;
Takayuki Kato, Kanagawa, JP;
Hidekazu Miyairi, Kanagawa, JP;
Yasuhiro Jinbo, Kanagawa, JP;
Mitsuhiro Ichijo, Kanagawa, JP;
Tomokazu Yokoi, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
An object is to provide a method for manufacturing a thin film transistor having favorable electric characteristics, with high productivity. A gate electrode is formed over a substrate and a gate insulating layer is formed over the gate electrode. A first semiconductor layer is formed over the gate insulating layer by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a rare gas. Next, a second semiconductor layer including an amorphous semiconductor and a microcrystal semiconductor is formed in such a manner that the first semiconductor layer is partially grown as a seed crystal by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a gas containing nitrogen. Then, a semiconductor layer to which an impurity imparting one conductivity is added is formed and a conductive film is formed. Thus, a thin film transistor is manufactured.