The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Apr. 18, 2007
Daniel E. Morse, Santa Barbara, CA (US);
Birgit Schwenzer, Goleta, CA (US);
John R. Gomm, Santa Barbara, CA (US);
Kristian M. Roth, Bothell, WA (US);
Brandon Heiken, Goleta, CA (US);
Richard Brutchey, Santa Barbara, CA (US);
Daniel E. Morse, Santa Barbara, CA (US);
Birgit Schwenzer, Goleta, CA (US);
John R. Gomm, Santa Barbara, CA (US);
Kristian M. Roth, Bothell, WA (US);
Brandon Heiken, Goleta, CA (US);
Richard Brutchey, Santa Barbara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.