The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Jan. 19, 2011
Koji Sakamoto, Odawara, JP;
Atsushi Katou, Odawara, JP;
Takao Yonekawa, Odawara, JP;
Norihiro Ookawa, Odawara, JP;
Kouichi Nishioka, Hiratsuka, JP;
Kouji Okazaki, Odawara, JP;
Koji Sakamoto, Odawara, JP;
Atsushi Katou, Odawara, JP;
Takao Yonekawa, Odawara, JP;
Norihiro Ookawa, Odawara, JP;
Kouichi Nishioka, Hiratsuka, JP;
Kouji Okazaki, Odawara, JP;
HGST Netherlands B.V., Amsterdam, NL;
Abstract
A method for manufacturing a magnetic sensor that decreases area resistance and decreases MR ratio of the sensor by eliminating any oxide formation in the capping layer of the sensor. The method includes forming a sensor stack having a multi-layer capping structure formed there-over. The multi-layer capping structure can include first, second, third and fourth layers. The second layer is constructed of a material that is not easily oxidized and which is different from the first layer. The sensor can be formed using a mask that includes a carbon hard mask. After the sensor stack has been formed by ion milling, the hard mask can be removed by reactive ion etching. Then, a cleaning process is performed to remove the second, third and fourth layers of the capping layer structure using an end point detection method such as secondary ion mass spectrometry to detect the presence of the second layer.