The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Aug. 22, 2011
Applicants:
Naoshi Adachi, Tokyo, JP;
Tamio Motoyama, Tokyo, JP;
Inventors:
Naoshi Adachi, Tokyo, JP;
Tamio Motoyama, Tokyo, JP;
Assignee:
Sumco Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 21/02 (2006.01); C30B 25/02 (2006.01); C30B 25/18 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
An epitaxial wafer comprises a silicon substrate, a gettering epitaxial film formed thereon and containing silicon and carbon, and a main silicon epitaxial film formed on the gettering epitaxial film, in which the gettering epitaxial film has a given carbon atom concentration and carbon atoms are existent between its silicon lattices.