The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
May. 17, 2011
Daigo Aoki, Niigata-ken, JP;
Hideyuki Hashimoto, Niigata-ken, JP;
Tetsuya Kobayashi, Niigata-ken, JP;
Kunio Koizumi, Niigata-ken, JP;
Yoshiaki Shimizu, Niigata-ken, JP;
Yutaka Takashima, Niigata-ken, JP;
Shinya Yokoyama, Niigata-ken, JP;
Daigo Aoki, Niigata-ken, JP;
Hideyuki Hashimoto, Niigata-ken, JP;
Tetsuya Kobayashi, Niigata-ken, JP;
Kunio Koizumi, Niigata-ken, JP;
Yoshiaki Shimizu, Niigata-ken, JP;
Yutaka Takashima, Niigata-ken, JP;
Shinya Yokoyama, Niigata-ken, JP;
Alps Electric Co., Ltd., Tokyo, JP;
Abstract
There is provided a semiconductor pressure sensor which improves the sensor sensitivity and is excellent in the withstand pressure characteristic and the temperature characteristic. In the semiconductor pressure sensor in which a diaphragm is formed by a cavity provided on one of top and bottom surfaces of a silicon substrate and a plurality of piezoresistors is disposed in the diaphragm edge, a recess which has a larger area than the planar shape of the diaphragm and whose entire edge is located outward from the diaphragm edge in plan view is provided in a protective film which covers the entire surface of the silicon substrate on the diaphragm side. The protective film located on the diaphragm is preferably formed of SiO.