The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Jun. 06, 2011
Applicant:
Krishnakumar Mani, San Jose, CA (US);
Inventor:
Krishnakumar Mani, San Jose, CA (US);
Assignee:
Magsil Corporation, Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/06 (2006.01); G11C 11/14 (2006.01);
U.S. Cl.
CPC ...
Abstract
Magnetic memory cell comprising two conductors and a magnetic storage element between the two conductors, wherein a magnetic enhancement layer (MEL) is provided in the proximity of at least along a partial length of at least one of the two conductors. The MEL is for enhancing a magnetic field in the element when the two conductors are energized. Methods for operation and fabrication process for the memory cell are also disclosed. The memory cell is particularly for use in magnetic random access memory (MRAM) circuits, when using magnetic tunnel junction (MTJ) stacks as the magnetic storage elements.