The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Jun. 28, 2011
Mitsuteru Iijima, Osaka, JP;
Takeshi Takagi, Kyoto, JP;
Koji Katayama, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A method for programming a nonvolatile memory device according to the present invention includes a step of detecting an excessively low resistance cell from among a plurality of memory cells () (S); a step of changing the resistance value of a load resistor () to a second resistance value smaller than a first resistance value (S); and a step of causing, by applying a voltage pulse to a series circuit including the excessively low resistance cell and the load resistor () having the second resistance value, a variable resistance element () included in the excessively low resistance cell to shift to a second high resistance state having a resistance value greater than that of the first low resistance state (S).