The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2013

Filed:

May. 30, 2012
Applicants:

Takashi Masuzawa, Anjo, JP;

Toshihiro Fujita, Obu, JP;

Hiroshi Taki, Okazaki, JP;

Inventors:

Takashi Masuzawa, Anjo, JP;

Toshihiro Fujita, Obu, JP;

Hiroshi Taki, Okazaki, JP;

Assignee:

Denso Corporation, Kariya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 7/5387 (2007.01); H02M 3/24 (2006.01); H02M 7/44 (2006.01); H02M 7/537 (2006.01); H02M 1/00 (2007.01);
U.S. Cl.
CPC ...
Abstract

In a semiconductor module, a high-potential side conductor includes a wide section on which the high-potential side switching element is mounted, a high-potential side terminal coupled with a high potential source, and a narrow section extending from the wide section to the high-potential side terminal in a first direction. The wide section is wider than the narrow section in a second direction perpendicular to the first direction. The wide section has a first side and a second side opposite to the first side in the second direction. A distance between the first side of the wide section and a low-potential side conductor is shorter than a distance between the second side of the wide section and the low-potential side conductor. The narrow section extends from a portion of the wide section closer to the first side than the second side.


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