The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2013

Filed:

Jun. 25, 2010
Applicants:

Mingoo Seok, Ann Arbor, MI (US);

Dennis Sylvester, Ann Arbor, MI (US);

David Blaauw, Ann Arbor, MI (US);

Scott Hanson, Waterford, MI (US);

Gregory Chen, Ann Arbor, MI (US);

Inventors:

Mingoo Seok, Ann Arbor, MI (US);

Dennis Sylvester, Ann Arbor, MI (US);

David Blaauw, Ann Arbor, MI (US);

Scott Hanson, Waterford, MI (US);

Gregory Chen, Ann Arbor, MI (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 3/16 (2006.01);
U.S. Cl.
CPC ...
Abstract

An improved voltage reference generator is provided. The voltage reference generator comprises: a first transistor having a gate electrode biased to place the first transistor in a weak inversion mode; and a second transistor connected in series with said first transistor and having a gate electrode biased to place the second transistor in a weak inversion mode, where the threshold voltage of the first transistor is smaller than the threshold voltage of the second transistor and the gate electrode of the second transistor is electrically coupled to a drain electrode of the second transistor and the source electrode of the first transistor to form an output for a reference voltage.


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