The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8564131 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 22, 2013

Filed:

Jan. 14, 2002
Applicants:

Goro Nakatani, Kyoto, JP;

Tatsuya Sakamoto, Kyoto, JP;

Inventors:

Goro Nakatani, Kyoto, JP;

Tatsuya Sakamoto, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention is characterized in including interconnect layer formed on surface of a substrate forming desired element region, inter layer dielectric covering surface of said interconnect layer, silicon nitride film formed so as covering whole surface of said inter layer dielectric, metal interconnect layer consisting of gold layer as the uppermost lay metal formed on the upper layer of said silicon nitride film, and planarized dielectric formed on said metal interconnect layer.


Find Patent Forward Citations

Nakatani, Goro. (2013). Semiconductor device and method for manufacturing the same (U.S. Patent No. 8564131). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8564131

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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