The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Apr. 11, 2011
Applicants:
Wen-ching Sun, Taoyuan County, TW;
Tzer-shen Lin, Hsinchu, TW;
Sheng-min Yu, Taoyuan County, TW;
Inventors:
Assignee:
Industrial Technology Research Institute, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
According to an embodiment of the invention, a passivation layer structure of a semiconductor device disposed on a semiconductor substrate is provided, which includes a passivation layer structure disposed on the semiconductor substrate, wherein the passivation layer structure includes a halogen-doped aluminum oxide layer. According to an embodiment of the invention, a method for forming a passivation structure of a semiconductor device is provided.