The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8564090 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 22, 2013

Filed:

Dec. 09, 2010
Applicant:

Noriaki Oda, Kanagawa, JP;

Inventor:

Noriaki Oda, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device include an insulating interlayer formed over a substrate; an electrical fuse which is composed of a first wiring formed in the insulating interlayer, and has a cutting portion; and a second wiring and a third wiring, formed respectively on both sides of the cutting portion to extend along the cutting portion in the same layer as the first wiring. Air gaps formed to extend along the cutting portion are respectively provided between the cutting portion and the second wiring and between the cutting portion and the third wiring.


Find Patent Forward Citations

Oda, Noriaki. (2013). Semiconductor device and method of manufacturing semiconductor device (U.S. Patent No. 8564090). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8564090

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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