The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Jun. 03, 2011
Colm Donovan, Valencia, ES;
Javier a Salcedo, North Billerica, MA (US);
Colm Donovan, Valencia, ES;
Javier A Salcedo, North Billerica, MA (US);
Analog Devices, Inc., Norwood, MA (US);
Abstract
Metal oxide semiconductor (MOS) protection circuits and methods of forming the same are disclosed. In one embodiment, an integrated circuit includes a pad, a p-type MOS (PMOS) transistor, and first and second n-type MOS (NMOS) transistors. The first NMOS transistor includes a drain, a source and a gate electrically connected to the pad, a first supply voltage, and a drain of the PMOS transistor, respectively. The second NMOS transistor includes a gate, a drain, and a source electrically connected to a bias node, a second supply voltage, and a source of the PMOS transistor, respectively. The source of the second NMOS transistor is further electrically connected to a body of the PMOS transistor so as to prevent a current flowing from the drain of the PMOS transistor to the second supply voltage through the body of PMOS transistor when a transient signal event is received on the pad.